| 摘要 |
According to the inventive new method of doping impurity, a chemically active semiconductor surface is covered with an adsorption layer composed of impurity element which forms a dopant in the semiconductor or composed of compound containing the impurity element. Thereafter, solid phase diffusion is effected with using the adsorption layer as an impurity diffusion source so as to form an impurity-doped region having a desired density profile in the depth direction. |
