发明名称 MANUFACTURE OF NONLINEAR VOLTAGE RESISTOR
摘要 <p>PURPOSE:To make elements highly dense and to enhance their nonlinearity and their voltage-impression life by a method wherein, in a manufacturing process in which a metal oxide is added to and mixed with a raw material composed mainly of zinc oxide and this mixture is baked, a temperature-raising process, a holding process of a highest temperature and a temperature-lowering process down to a specific temperature are executed in a reduced pressure state. CONSTITUTION:A metal oxide such as bismuth oxide, an antimony oxide or the like is added to and mixed with a raw material composed mainly of zinc oxide; this mixture is baked. In a heat-treatment schedule of this baking process, a temperature-raising process, a holding process of a highest temperature and a temperature-lowering process down to 1100 deg.C or lower are executed in a state that a pressure has been reduced to a prescribed value or lower. Thereby, it is possible to effectively remove that pores are produced inside an element by a vapor pressure of bismuth oxide or the like. The elements become highly dense and their nonlinearity and their voltage-impression life are enhanced.</p>
申请公布号 JPH0323601(A) 申请公布日期 1991.01.31
申请号 JP19890156731 申请日期 1989.06.21
申请人 NGK INSULATORS LTD 发明人 SATO RITSU
分类号 H01C7/10 主分类号 H01C7/10
代理机构 代理人
主权项
地址