发明名称 |
Integrated semiconductor diode laser and photodiode structure. |
摘要 |
<p>Integrated semiconductor structure with optically coupled laser diode (11) and photodiode (12A), both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.</p> |
申请公布号 |
EP0410067(A1) |
申请公布日期 |
1991.01.30 |
申请号 |
EP19890810577 |
申请日期 |
1989.07.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BUCHMANN, PETER LEO, DR.;HARDER, CHRISTOPH STEPHAN, DR.;VOEGELI, OTTO, DR. |
分类号 |
H01S5/00;H01L33/00;H01S5/026;H01S5/10;H01S5/14 |
主分类号 |
H01S5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|