| 摘要 |
PURPOSE:To obtain a P type photoresist film having overhangs, by contacting the resist film consisting of cresol novolac resin and naphthoquinone diazosulfonate ester with Br-containing gas before or after exposing it to light. CONSTITUTION:A selected P type resist is applied on a substrate by a conventional method and contacted with Br gas, preferably vaporized methanol Br gas dilluted with an inactive gas, before or after exposing it to light. The Br concentration, the time to be contacted with Br and the flow rate of Br- containing gas are selected appropriately in accordance with an application and a length l of overhangs to be formed. When the resist is exposed to light and developed, the surface layer of the light-exposed region is sufficiently solidified and becomes hardly meltable by the action of Br. Accordingly, the overhangs can be shaped perfectly without irregularity at the ends. |
