| 摘要 |
<p>A high voltage amorphous silicon thin film transistor (10) including a gate electrode (14) which controls the injection of charge carriers from a superimposed n<+> doped amorphous silicon source electrode (24) into an amorphous silicon charge carrier transport layer (18) spaced from the gate electrode by a dielectric layer (16) for causing current conduction through the transport layer to a laterally-offset drain electrode (26). The source electrode is in charge-injecting contact with the transport layer, and the drain electrode is in collecting contact with the transport layer.</p> |
