发明名称 Semiconductor integrated circuit.
摘要 <p>There is disclosed a semiconductor integrated circuit provided with an input circuit including an N-channel MOS transistor (N2) of which threshold voltage is set to a value lower than those of N-channel MOS transistors (N1, N3, N4) constituting other internal circuits of the integrated circuit. Thus, a circuit having a high operating margin for power supply noises is provided. This circuit further comprises a P-channel MOS transistor (P2) constituting a portion of a NOR gate or a NAND gate together with the above-mentioned N-channel MOS transistor (N2).</p>
申请公布号 EP0410473(A2) 申请公布日期 1991.01.30
申请号 EP19900114459 申请日期 1990.07.27
申请人 KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-ELECTRONICS CORPORATION 发明人 KATO, HIDEO;KIKUCHI, SHINICHI;NAKAI, HIROTO;IWAHASHI, HIROSHI
分类号 H03K19/0185;H03K19/003;H03K19/0948 主分类号 H03K19/0185
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