DIELECTRICALLY ISOLATED SEMICONDUCTOR SUBSTRATE,申请号EP19890303219-传众专利搜索

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发明名称	DIELECTRICALLY ISOLATED SEMICONDUCTOR SUBSTRATE
摘要
申请公布号	EP0335741(A3)	申请公布日期	1991.01.30
申请号	EP19890303219	申请日期	1989.03.31
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	YAMAGUCHI, YOSHIHIRO C/O PATENT DIVISION;WATANABE, KIMINORI C/O PATENT DIVISION;NAKAGAWA, AKIO C/O PATENT DIVISION;FURUKAWA, KAZUYOSHI C/O PATENT DIVISION;FUKUDA, KIYOSHI C/O PATENT DIVISION;TANZAWA, KATSUJIRO C/O PATENT DIVISION
分类号	H01L21/02;H01L21/762;H01L27/12;(IPC1-7):H01L21/94	主分类号	H01L21/02
代理机构		代理人
主权项
地址

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