| 摘要 |
PURPOSE:To improve the forming speed of a film formed by plasma by providing meshes of conductive material to the side, facing another electrode, of wafer holding parts of one electrode. CONSTITUTION:An electrode plate 14, which composes an anode, and a suscepter 16, which composes a cathode, are placed in a plasma chamber which consists of an upper chamber 10 and a lower chamber 12. Meshes 30 made of conductive material such as aluminum are fitted under the recesses 26 where wafers 28 are held in such a manner that the meshes 30 cover the lower parts of the recesses 26. With this constitution, the sufficiently strong electric field is applied to the lower part of the wafer holding recesses 26 as well as other parts of the suscepter, so that the film forming efficiency is improved and the film forming speed is increased. |
