High voltage thin film transistor with second control electrode.

摘要

A high voltage thin film transistor comprising an amorphous semiconductor charge transport layer (16 min ) laterally disposed source and drain electrodes (20 min 22 min ), a first control electrode (12 min ) with one edge laterally overlapping the source electrode and another edge laterally spaced from the drain electrode. A source of high potential is applied to the drain electrode and a source of low potential is applied to the first control electrode in a time varying manner so as to form an accumulation channel in the charge transport layer, opposite to the first control electrode. Device performance is improved by including a second control electrode (26) disposed in the same plane as the first control electrode and biased for preventing the formation of defects within the charge transport layer adjacent the said another edge.