Method of producing semiconductor device.

摘要

The method of forming electrical interlayer contact in a semiconductor device. An insulating film is formed on a first electroconductive layer and then a contact hole is formed in the insulating film to expose a part of the first electroconductive. An activated surface of the exposed part is formed in the contact hole. A gas containing an impurity component is supplied to form an impurity adsorption film on the activated surface. The contact hole is filled with a second electroconductive layer to form electrical contact between the first and second electroconductive layers through the contact hole.