Window taper-etching method in the manufacture of integrated circuit semiconductor devices.

摘要

In a two-step etching process for making tapered contact openings in a dielectric (11), a thin layer of a material (12) is interposed to serve as an adhesive between the dielectric and a photoresist layer (13); such material is chosen to remain essentially intact during undercut partial etching of the dielectric. As a result of enhanced adhesion, the photoresist layer remains more accurately positioned for subsequent isotropic etching across the remainder of the thickness of the dielectric.