发明名称 |
Etch resistant pattern formation via interfacial silylation process. |
摘要 |
<p>A pattern is formed by first coating on a substrate a photosensitive organic polymer layer, and then an overlying film comprising an aminoalkoxysilane. After exposure in a predetermined pattern to radiation, the coated substrate is heated at a temperature so as to form an interfacial silicon-containing coupling layer between the film and the crosslinked portions of the polymer layer. Then, the coated substrate is contacted with a solvent so that the uncrosslinked portions of the polymer layer and the overlying portions of the film are simultaneously removed from the substrate. The process provides a high resolution, high aspect ratio pattern which demonstrates excellent etch resistance, while avoiding costly and cumbersome image transfer steps.</p> |
申请公布号 |
EP0410268(A2) |
申请公布日期 |
1991.01.30 |
申请号 |
EP19900113637 |
申请日期 |
1990.07.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLODGE, DONNA JEAN;PREVITI, ROSEMARY;STRATTON, ANITA BUCHANAN |
分类号 |
G03F7/09;G03F7/26;G03F7/38;H01L21/027 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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