| 摘要 |
<p>PURPOSE:To prevent concentric distribution of Si to the surface of Al surface by forming a structure in which PS is formed directly under an Al pad. CONSTITUTION:A polysilicon(PS) 2 is formed in direct contact with the base of an Al pad 1, and Al 1 pad has a contact of the PS film 2 with the Al 1. Then, it is covered with a protective film 5, and the film 5 is so etched as to expose the surface of the Al 1 film. Accordingly, movement of Si 4 to the Al 1 pad surface side can be prevented by heat treating, etc., in a manufacturing step, and a distance from the Al pad surface to an Si substrate can be increased. Thus, the influence of an impact at the time of wire bonding is reduced.</p> |
