METHOD OF INSPECTING LEAK CURRENT OF SEMICONDUCTOR DEVICE,申请号JP19890155374-传众专利搜索

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发明名称	METHOD OF INSPECTING LEAK CURRENT OF SEMICONDUCTOR DEVICE
摘要
申请公布号	JPH0320681(A)	申请公布日期	1991.01.29
申请号	JP19890155374	申请日期	1989.06.16
申请人	MATSUSHITA ELECTRON CORP	发明人	NAITO YUTAKA
分类号	G01R31/26;H01L21/66	主分类号	G01R31/26
代理机构		代理人
主权项
地址

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