发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To control polarity switching by turning on a state between a power supply and an output by depressed ion implantation, turning off a state between earth and the output, or turning off the state between the power supply and the output and turning on the state between the earth and the output. CONSTITUTION:As depressed ion implantation is performed only for transistors Q1, Q2, the transistors Q1, Q2 are turned on, and Q2, Q1 are off, so that corresponding potentials at a node N1 are H, L levels and potentials an N2 are L, H levels. Herein, once a signal IN1 is inputted into a node N3, a transistor Q6 is turned on when ion implantation is conducted only for the transistor Q1, and hence a signal OUT1 of the same phase as that of the signal IN1 is issued from a node N4. Reversely, when the ion implantation is conducted only for the transistor Q2, a transistor Q5 is turned on and the signal OUT1 becomes a signal reverse to the signal IN1 in phase. Hereby, a two polarity output signal can be yielded from one signal by controlling depressed ion implantation.
申请公布号 JPH0321068(A) 申请公布日期 1991.01.29
申请号 JP19890155468 申请日期 1989.06.16
申请人 MATSUSHITA ELECTRON CORP 发明人 YOSHIMURA EMI
分类号 G11C17/08;H01L21/8246;H01L27/112 主分类号 G11C17/08
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