| 摘要 |
<p>PURPOSE:To form an N-type impurity region, which has diffusion length being high in concentration and shallow, by making a boat, on which a plate-shaped solid arsenic diffusion source and a silicon substrate for performing diffusion are loaded, in cylindrical shape. CONSTITUTION:In case of diffusing, by heat, arsenic from a plate-shaped solid into a silicon substrate 2, a cylindrical boat is used for the boat whereon the plate-shaped solid arsenic diffusion source 1 and the silicon substrate 2 are loaded. For this reason, the flow 6 of specific gas arising between the plate- shaped solid arsenic diffusion source 1 and the silicon substrate can be reduced, and the flow speed of the gas inside the cylindrical boat 1 can be suppressed low. Hereby, an arsenic diffusion area excellent in uniformity can be formed inside the wafer surfaces and between the wafers.</p> |
