发明名称 FORMATION OF RESIST PATTERN
摘要 PURPOSE:To obtain the resist pattern having high resolution and high adhesion at the time of forming a photosensitive film by electrodeposition coating by using a coating bath obtained by adding a basic org. compd. to a composition contg. specified acrylic monomer, photopolymerizable monomer and photopolymerization initiator. CONSTITUTION:(a) A polymer having 30-250 acid value and obtained by copolymerizing acrylic acid or methacrylic acid and a polymerizable monomer of the homopolymer having >=0 deg.C glass transition point as the essential components, (b) a water-insoluble monomer having >=2 photopolymerizable unsaturated bond in the molecule and (c) a photosensitive electrodeposition coating contg. a water-insoluble photopolymerization initiator or an initiator are added with a basic org. compd. and then with water to obtain a water-soluble or water-dispersible electrodeposition coating bath. A conductive substrate is dipped in the bath as an anode, a current is applied to coat the substrate, the coating film is irradiated with an active light beam in the form of a picture, the exposed part of the coating film is photoset, the unexposed part is removed by development, and a photoset resist pattern is formed.
申请公布号 JPH0320497(A) 申请公布日期 1991.01.29
申请号 JP19890156367 申请日期 1989.06.19
申请人 HITACHI CHEM CO LTD 发明人 TACHIKI SHIGEO;ISHIMARU TOSHIAKI;HAYASHI NOBUYUKI;KAKUMARU HAJIME
分类号 G03F7/26;C25D13/00;C25D13/06;H05K3/06 主分类号 G03F7/26
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