| 摘要 |
PURPOSE:To realize further greater capacity by forming an adjacent word line on a CVD oxide film provided on a field oxide film formed by thermal oxidation. CONSTITUTION:A CVD oxide film 14 is formed between an adjacent word line 4b and a field oxide film 2. Namely, the CVD oxide film 14 is formed more thickly between the word line 4b and the field oxide film 2 where a stacked capacitor is extended and formed. Accordingly, even though the occupied area of a memory capacitor in plan view is not expanded, the stepped portion of the stacked capacitor cell is increased corresponding to a thicker fraction of the film 14 formed under the word line 4b. Thus, a large area is assured to increase the capacity. |
