发明名称 |
Method for compensating for the E-beam proximity effect |
摘要 |
A method to compensate for the E-beam proximity effect which includes a post exposure, pre-development baking of the photoresist layer. The baking of the photoresist layer causes a migration of small, photo-active compound (PAC) molecules to increase the size of peripheral exposed areas so as to compensate for the exposure size variations caused by the proximity effect.
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申请公布号 |
US4988284(A) |
申请公布日期 |
1991.01.29 |
申请号 |
US19860916662 |
申请日期 |
1986.10.08 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
LIU, HUA-YU;LIU, EN-DEN D. |
分类号 |
H01L21/027;G03F7/38;H01L21/30 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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