| 摘要 |
PURPOSE:To automatically measure the off-angle amount of a semiconductor single crystal by detecting diffracted X-rays while a sample is rotated at a speed of one or more revolutions within a detection period for diffracted X-rays concerning one incident angle. CONSTITUTION:In a single crystal substrate 1 wherein a sample surface is deviated from the crystal surface by an angle delta, intense diffraction peaks are obtained at the incident angles of thetaB-delta and thetaB+delta, when the detection angle of the diffracted X-rays is fixed at 2thetaB. Even in the case where the incident angle is thetaB-delta or thetaB+delta, the diffraction peak changes in accordance with the direction of the sample. When the sample is rotated by setting the normal of the sample surface as an axis, diffraction intensity averaged about all directions of the sample can be obtained. When the diffraction intensity is detected while the incident angle is varied in the vicinity of thetaB with minute step intervals, large diffraction intensity can be observed at the incident angle of thetaB-delta and thetaB+delta. Based on the two peak positions, off-angle amount can be obtained, and quick and precise measurement is enabled. |
