| 摘要 |
PURPOSE: To increase the degree of integration of a DRAM element and, at the same time, to improve the reliability of metallic wiring, by forming a field oxide film on a substrate and a Tin/TiSi2 layer on a formed source/drain area and the field oxide film and, after a low-temperature oxide film and a BPSG layer are vapor deposited on the Tin/TiSi2 layer, contact-etching the oxide film and BPSG layer and vapor-depositing a metallic layer on the etched surfaces of the oxide film and BPSG layer. CONSTITUTION: After a field oxide film 12 is grown on a substrate 11, a source/ drain area 16 is formed and a Ti layer 20 is vapor-deposited on the area 16. After the Ti layer 20 is formed, the layer 20 is converted into a Tin/TiSi2 layer 22. Then, a low-temperature oxide film 17 and BPSG layer 18 are successively vapor-deposited on the layer 22. In addition, the oxide film 17 and the BPSG layer 18 on the Tin/TiSi2 layer 22 are etched. Moreover, a metallic layer 19 is vapor-deposited and the layer 19 above the top face and side sections of a gate area 14 is etched. |
