| 摘要 |
PURPOSE: To further increase the degree of integration of a semiconductor memory and to prevent the memory from being restricted by the adjusting accuracy of photographic treatment performed for manufacturing the contact section between a transistor and a capacitor, by constituting the contact section between the first electrode of the capacitor and the conducive area of the transistor of the opened section of a first insulating layer on the side wall of a groove. CONSTITUTION: After a field oxide 3 is formed on a substrate 1, a groove 4 from housing a memory capacitor is formed by etching the substrate 1 together with the oxide 3 and, successively, silicon dioxide 7 is formed as a first insulating layer by oxidizing the internal surface of the groove 4. At the upper edge of the trench 4, a simple photographic technique is used for opening the oxide 7 on the internal surface of the trench. Then, a first electrode 10 is formed by depositing a conductive material, such as the polycrystalline silicon. A spacer composed of polycrystalline silicon forms a terminal for the substrate 1 at a groove contacting section 9. Then, a dielectric substance 11 is deposited on the first electrode 10, and the exposed part of the dielectric material 11 on the outside of the capacitor and an oxide 5 bellow the material 11 are etched. Finally, a source area 14 is connected to the first electrode 10 through the contacting section 9. |
