发明名称 SEMICONDUCTOR LASER MODULATION DEVICE
摘要 PURPOSE:To attain highly stable optical modulation on a transitional basis and on a long-term basis by providing two amplifiers which separately amplify a bias current and a modulation current and a switch circuit which switches the modulation current at high speed and controlling the fluctuation of optical output owing to transitional temperature change. CONSTITUTION:The title device consists of a highly precise and high speed amplifier 5 amplifying a signal converted into an electric signal in a sensor part, a holding circuit 6 storing a voltage corresponding to light intensity at the time of natural light emission, a holding circuit 7 storing a signal correspond ing to intense light outputted from a laser 3 when the modulation current is turned on, a generation circuit 8 for two reference voltages which are to be set as the reference of two-kinds of holding signals, two amplifiers 9 and 10 amplifying the reference voltages and a holding voltage error and outputting the bias current and a modulation current value signal and an ECL circuit switching the modulation current at high speed. Then, both the bias current and the modulation current are controlled for the change of a current-to-optical output characteristic. Thus, highly stable optical modulation is attained on a transitional basis and on a long-term basis.
申请公布号 JPH0319146(A) 申请公布日期 1991.01.28
申请号 JP19890153951 申请日期 1989.06.16
申请人 NEC CORP 发明人 ABE HIDEAKI
分类号 G11B7/125;H01S5/06 主分类号 G11B7/125
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