| 摘要 |
PURPOSE:To restrain an electromigration from being produced and to enhance an interconnection life by a method wherein nitrogen is contained in a film composed mainly of aluminum and a crystal particle diameter on the surface and at the inside of an inter-connection is adjusted so as to be 0.3mum or lower. CONSTITUTION:Nitrogen is contained in a film composed mainly of aluminum; a crystal particle diameter on the surface and at the inside of an interconnection is adjusted so as to be 0.3mum or lower. That is to say, when an addition amount of a gas is adjusted and a sputtering operation is executed, a crystal state inside an aluminum interconnection formed on a substrate is affected by a nitride compound of aluminum (AlN); it is possible to restrain a secondary particle from being produced; its crystal particle diameter is controlled to 0.3mum or lower; a dense film can be formed. Consequently, a grain boundary by the secondary particle can be reduced. Thereby, it is possible to restrain aluminum from being moved via the grain boundary and to restrain an electromigration; in addition, it is possible to prevent an alloy spike. |
