发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To obtain the highest resolving performance of a resist by applying the optimum range of an exposure and the temp. and time of baking. CONSTITUTION:The resist of the chemical sensitization system which includes a reaction initiator generated or activated by energy rays and generates the reaction to change the dissolving speed of the resist in a developing soln. at the time of development by the catalytic effect of the reaction initiator is used. The exposure E, the baking temp. T and the baking time t are so set as to satisfy the relations expressed by equation I. In the equation, epsilona, kB are respectively the activation energy of the catalytic reaction and a Boltzmann constant. The optimum relations of the exposure and the time and temp. of the baking after the exposing are obtd. in this way and the quantity of the main reaction in the exposed parts and light shielding parts of the fine patterns is controlled and, therefore, the excellent resolving performance of the resist is obtd.
申请公布号 JPH0315849(A) 申请公布日期 1991.01.24
申请号 JP19890149623 申请日期 1989.06.14
申请人 HITACHI LTD 发明人 FUKUDA HIROSHI;OKAZAKI SHINJI
分类号 G03F7/26;G03F7/38;H01L21/027;H01L21/30 主分类号 G03F7/26
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