VERFAHREN ZUR HERSTELLUNG VON MOS-BAUELEMENTEN MIT SIO TIEF 2-SI TIEF 3N TIEF 4-ISOLATORSCHICHTEN,申请号DD19870300933-传众专利搜索

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发明名称	VERFAHREN ZUR HERSTELLUNG VON MOS-BAUELEMENTEN MIT SIO TIEF 2-SI TIEF 3N TIEF 4-ISOLATORSCHICHTEN
摘要
申请公布号	DD286459(A5)	申请公布日期	1991.01.24
申请号	DD19870300933	申请日期	1987.03.19
申请人	AKADEMIE DER WISSENSCHAFTEN DER DDR,DE	发明人	SCHMALZ,KLAUS,DE;TITEL,WOLFGANG,DE;KRAUSE,RAINER,DE;KIRSCHT,FRITZ-GUENTER,DE;RICHTER,HANS,DE
分类号	H01L21/322;H01L21/324;(IPC1-7):H01L21/322	主分类号	H01L21/322
代理机构		代理人
主权项
地址

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