发明名称 PHOTOVOLTAIC ELEMENT
摘要 PURPOSE:To improve reproducibility in a manufacture process and to reduce a manufacture cost by using a highly conductive and light-transmitting P-type semiconductor which has both functions as a transparent conductive film and as a P-type semiconductor layer. CONSTITUTION:A PIN-type semiconductor film consisting of a P-type semiconductor layer 2, an I-type semiconductor layer 3, and an N-type semiconductor layer 4 is laminated on a substrate 1. A metallic electrode film 5 which is a rear electrode is laminated on a semiconductor film (the N-type semiconductor layer 4). The P-type semiconductor layer has a function as a transparent conductive film in addition to a function as a P-type semiconductor. That is, the P-type semiconductor layer functions not only as a light transmitting layer having high light transmittance but also as an electrode to take out electric power. When the P-type semiconductor is provided with a hetero junction, it also functions as a barrier layer of electrons which are photoelectrically produced. Thereby, it is possible to have both functions as a P-type semiconductor itself and as a transparent conductive film, to reduce a manufacture cost, and to reduce characteristics deterioration due to light irradiation.
申请公布号 JPH0316272(A) 申请公布日期 1991.01.24
申请号 JP19890150913 申请日期 1989.06.14
申请人 SANYO ELECTRIC CO LTD 发明人 IWAMOTO MASAYUKI;MINAMI KOJI;WATANABE KANEO
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
地址