| 摘要 |
PURPOSE:To control atom one by one in a three-dimensional way by setting a needle having a tip whose size is about that of one atom in a molecular beam epitaxial growth device, transferring the needle while impressing voltage between the needle and a substrate and selectively dissociating a desired element only in a given zone. CONSTITUTION:A needle 9 having a tip whose size is about that of atom is set in a vacuum bath 1 of molecular beam epitaxial growth device. Further, mechanism of bringing the tip of the needle 9 close to the surface of a substrate to grow crystal and scanning the needle and mechanism capable of impressing voltage between the needle 9 and the surface of the substrate 3 and measuring tunnel current of the needle 9 are equipped. Constituent elements are fed from molecular beam sources 2 to the substrate 3 by molecular beams 4, about one atom layer or plural atom layers are adsorbed on the substrate, the tip of the needle 9 is brought close to the substrate 3 up to distance about size of atom, the needle is transferred while impressing voltage and a desired element is selectively dissociated only in a given zone. |
