| 摘要 |
PURPOSE:To highly integrate by a Schottky barrier diode equipped with metal wirings through an insulating film contacting S.B layers, by providing a guard ring on a concave side wall in a substrate and a Schottky barrier layer on a bottom part. CONSTITUTION:A concave is provided on an element forming part of the substrate 1 having an oxide film 12 with borron added glass film (BSG) 14 accumulated over the entire surface. BSG is left on only the concave side wall, and further, a CVD-SiO2 film 15 accumulated over the entire surface to perform thermal diffusion with the left BSG film 14 as a diffusion source to form a p<+> type guard ring 16. The SiO2 film 15 is removed to form a Pt silicide layer (Schottky barrier layer) 18 on the bottom of the concave with Al wiring 19 formed via an insulating film 12 for SBD. |
