发明名称 Acousto-electronic device with surface wave arrangement - and IC on support, with layer structure with semiconductor crystal layer on another part of support
摘要 (A) A novel acousto-electronic device has a surface wave arrangement (61,62) and a semiconductor IC (41,42) for operating the surface wave arrangement, the device being of integrated construction with a support (2) which also forms the substrate of the surface wave arrangement (61,62). A layer structure (3), with a semiconductor crystal layer (32) usable for ICs (41,42), is located on part of the support surface, the other part (5) of the support surface being provided with at least a portion of the surface wave structure (61,62). Electrical connections (71,72) are provided for connecting the IC (41,42) to the surface wave structure (61,62) and the support (2) and the layer structure (3) are monolithic. ADVANTAGE - The device is a monolithic, integrated acousto-electronic chip with high piezoelectric coupling -factor, high mechanical quality and good semiconductive properties.
申请公布号 DE3922671(A1) 申请公布日期 1991.01.24
申请号 DE19893922671 申请日期 1989.07.10
申请人 SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE 发明人 GRASSL, HANS-PETER, DR.TECHN., 8011 ZORNEDING, DE
分类号 H03H3/08;H03H9/02;H03H9/05 主分类号 H03H3/08
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