摘要 |
(A) A novel acousto-electronic device has a surface wave arrangement (61,62) and a semiconductor IC (41,42) for operating the surface wave arrangement, the device being of integrated construction with a support (2) which also forms the substrate of the surface wave arrangement (61,62). A layer structure (3), with a semiconductor crystal layer (32) usable for ICs (41,42), is located on part of the support surface, the other part (5) of the support surface being provided with at least a portion of the surface wave structure (61,62). Electrical connections (71,72) are provided for connecting the IC (41,42) to the surface wave structure (61,62) and the support (2) and the layer structure (3) are monolithic. ADVANTAGE - The device is a monolithic, integrated acousto-electronic chip with high piezoelectric coupling -factor, high mechanical quality and good semiconductive properties.
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申请人 |
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE |
发明人 |
GRASSL, HANS-PETER, DR.TECHN., 8011 ZORNEDING, DE |