发明名称 MASK STRUCTURE FOR X-RAY LITHOGRAPHY AND X-RAY EXPOSURE USING MASK STRUCTURE
摘要 <p>PURPOSE:To perform highly accurate pattern transfer; besides, prevent the destruction of X-ray absorbents during the manufacture of X-ray mask structures or during normal service of them by forming the X-ray absorbents which exhibit high properties adherent to a film permeable to X-rays on the film that is permeable to the X-rays and exhibits low thermal expansion and high heat transmission properties. CONSTITUTION:A film 2 permeable to X-rays, X-ray absorbents 3, and a holding frame 1 are provided in such a way that the film 2 consists of a single layer film having aluminum and nitrogen as main components or a laminated film which contains at least the above single layer film and the X-ray absorbents 3 have a metal that is held on the film 2 as well as nitrogen as the main components and further, the holding frame 1 holds the film 2 perme able to X-rays. Having aluminum and nitrogen as the main components, the film 2 exhibits low thermal expansion properties and yet, has high heat transmission properties and prevents the rise of a temperature due to absorption of the X-rays. On the other hand, having the metal and nitrogen as the main components, the X-ray absorbents 3 exhibit high properties adherent to the film 2. This enables these elements to form patterns equipped with a hyper-fine high aspect ratio and the destruction of the patterns due to stress that is established on the occasion of forming a protecting film (or secondary electron anti-scattering film) made of polyimide and the like on the X-ray absorbents 3 is prevented.</p>
申请公布号 JPH0316116(A) 申请公布日期 1991.01.24
申请号 JP19900047238 申请日期 1990.03.01
申请人 CANON INC 发明人 SUGATA MASAO;IKEDA TSUTOMU;KATO HIDEO
分类号 G03F1/22;G03F1/54;G03F1/60;H01L21/027 主分类号 G03F1/22
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