发明名称 High density magnetic recording layer - uses an alloy of cobalt, platinum and chromium which is sputtered in an ambient containing oxygen and/or nitrogen
摘要 The general compsn. of the sputtered layer is: Co1-x-yPtxCry in which x = 0.15 to 0.35 and y 0 to 0.15 and a quantity of oxygen and/or nitrogen is present in the layer of not more than 5 x 10 21 ats./cm3, pref. 0.7-1.5x1021 ats/cm3. The Cr-content is pref. 5-15 at. %. The layer is pref. deposited by sputtering in an ambient contg. 0.1-15 vol. % N2 and/or 02 pref. 1-10 vol. % and at a total pressure of pref. 0.1-3 Pa. USE/ADVANTAGE - The deposited layer shows a combination of excellent corrosion resistance and high signal to noise ratio. The incorporated gas (nitrogen and/or oxygen) promotes the orientation of the hcp crystals formed with the c-axis parallel to the surface. The depsn. is insensitive to the sputtering equipment used, allowing the use of the magnetron, which gives fast deposition at a low pressure.
申请公布号 DE4021970(A1) 申请公布日期 1991.01.24
申请号 DE19904021970 申请日期 1990.07.10
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 KANAMARU, MASAYUKI, YOKOHAMA, JP;HIKOSAKA, TAKASHI, TOKIO/TOKYO, JP;NISHIKAWA, REIJI, YOKOHAMA, JP
分类号 G11B5/64;G11B5/851 主分类号 G11B5/64
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