| 摘要 |
<p>A process for chemical vapor deposition, in which a reactant gas is introduced into a reaction furnace containing a substrate on which a deposited layer is formed by a chemical reaction of the introduced reactant gas, and a used gas resulting from the chemical reaction is exhausted from the furnace through a plurality of exhaust ports disposed radially around an axis of flow of the reactant gas introduced into the furnace, which comprises the steps of: exhausting the used gas during the forming of the deposited layer on the substrate through an exhaust system comprising; exhaust ports disposed symmetrically with respect to a plane which contains the axis and at a substantially uniform distance from the axis; and exhaust pipes extending from the exhaust ports, each of the pipes being provided with a conductance valve inserted therein and a sensor for measuring a temperature of the pipe surface, the temperature sensor being fixed to the outer surface of the pipe at a position between the exhaust port and the conductance valve, and the exhaust pipes having substantially the same shape, size, and heat capacity over the portion thereof between the exhaust port and the position at which the temperature sensor is disposed: and adjusting the conductance valves during the exhausting of the used gas to minimize the differentials among the temperature values measured by the temperature sensors. An apparatus for carrying out the process is also disclosed.</p> |
