发明名称 WAFER-SCALE-INTEGRATED ASSEMBLY
摘要 The standard silicon wafer of a conventional wafer-scale-integrated assembly is doped to render it highly conductive. Additionally, a conductive layer is formed on the bottom of the wafer. The bottom-side layer forms an easily accessible ground plane of the assembly. Moreover, this layer and the conductive silicon constitute one plate of an advantageous wafer-size decoupling capacitor. A nearly continuous power layer and a relatively thick layer of silicon dioxide on the top side of the assembly form the other elements of the decoupling capacitor. Additionally, the nearly continuous power layer constitutes an effective a-c ground plane for overlying signal lines.
申请公布号 EP0197089(B1) 申请公布日期 1991.01.23
申请号 EP19850904950 申请日期 1985.09.30
申请人 AMERICAN TELEPHONE AND TELEGRAPH COMPANY 发明人 HERRERO, VICTOR;SCHAPER, LEONARD, WILLIAM
分类号 H01L23/52;H01L23/14;H01L23/538;H01L23/64 主分类号 H01L23/52
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