| 摘要 |
<p>PURPOSE:To radiate the light generated at the edge part of a p-n junction exposed at the end surface of a semiconductor chip directly to the outside without attenuation and improve the emission efficiency of the element by making the current density at the edge part large. CONSTITUTION:Anodes 2a-2d are formed independently close to the edges on the main surface of a p type semiconductor region of a semiconductor chip 1. The anodes 2a-2d are the same small trapezoids whose bottom side are approximately parallel to the respective edges of the main surface and the distance between the top side and the bottom side of each trapezoid is approximately 200mum. The anode 2a is connected to an anode lead 5 by a metal fine wire 4 and an n type semiconductor region jointed to an outside cathode lead 3 corresponding to that p type semiconductor region is formed. An exposed p-n junction J is formed between those two semiconductor regions and the specified parts are buried in transparent resin 6 and an emission element is made. Then the current to the regular direction is applied to the anode 2a via the fine wire 4 and the current density at the end of the p-n junction J is made larger and the light generated at the edge is radiated to the outside directly without attenuation.</p> |
