Methods of manufacturing MIS semiconductor devices.

摘要

A method of manufacturing a MIS semiconductor device having at least a portion of a drain region which contacts a channel and has a relatively low impurity concentration to obtain an LDD structure, wherein an insulating film (26) is formed on at least a surface of a semiconductor substrate (11) or double side walls (17,27) are formed on a gate electrode (13), the surface is oxidized, and in this state, an impurity region (25) having a relatively high impurity concentration is formed.