| 摘要 |
A hybrid integrated circuit device (31) comprises: an insulating substrate (21) having two parallel main surfaces adapted for formation of a thin film circuit thereon, at least one of said two main surfaces not being roughened, said insulating substrate being provided with piercing holes (22) penetrating from one to the other of said two main surfaces and having a diameter of less than 0.2 mm, the surface of piercing holes being roughened; first and second film circuits (25, 26) formed on said two main surfaces of the substrate, the film circuit formed on said at least one roughened surface of said two main surfaces of the substrate being a thin film circuit; a plate metal layer formed on the roughened surface or said piercing hole and electrically connected to said first and second film circuits; and a semiconductor chip (27) mounted on at least one of said first and second film circuits. …<??>Such a hybrid integrated circuit device can be denser and more compact than conventional hybrid IC devices and can be encapsulated by transfer molding. Preferably, the said insulating substrate is made of ceramics or glass, and the said piercing holes have a diameter of less than 0.1 mm. A fine piercing hole as mentioned above can be formed by laser drilling, etc., and plating. |
