| 摘要 |
PURPOSE:To keep the characteristics of broad-area structure, reduce light absorption near the end face as compared before, and achieve higher output by forming a conductivity type impurities diffusion region of different conductivity type as compared with a substrate which penetrates from a current blocking layer into a quantum well active layer and the reaches a clad layer. CONSTITUTION:There are an AlGaAs clad layer 2 and a GaAs quantum well active layer 3 of the same conductivity type as that of a substrate 1, an AlGaAs clad layer 4 of the different conductivity type from that of the substrate 1, and a GaAs current blocking layer 5 of the same conductivity type as that of the substrate 1 on the conductivity type GaAs substrate 1, an impurities diffusion region 8 of a different conductivity type from that of the substrate 1 reaching from the GaAs current blocking layer 5 to the AlGaAs clad layer 4 in stripe shape vertical to the end face at areas except those closer to the end face is formed, and the above impurities diffusion region 8 of different conductivity type from that of the substrate 1 penetrating the GaAs current blocking layer 5 and the GaAs quantum well active layer 3, reaching the AlGaAs clad layer 2 is formed near the end face. |
