Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine,申请号US19890391202-传众专利搜索

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发明名称	Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine
摘要
申请公布号	US4987311(A)	申请公布日期	1991.01.22
申请号	US19890391202	申请日期	1989.08.08
申请人	ETEC SYSTEMS, INC.	发明人	DEVORE, WILLIAM J.
分类号	H01L21/027;H01J37/244;H01J37/317;H01L21/30	主分类号	H01L21/027
代理机构		代理人
主权项
地址

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