| 摘要 |
PURPOSE:To form even patterns on the whole surface of a wafer while simultaneously stopping the development on the whole surface by a method wherein, after developing the substrate surface by bringing it into contact with a developer for specific time, the whole surface of the substrate is irradiated with ultraviolet rays and after stopping the development, a rinsing solution is poured on the whole surface of the substrate for cleaning it up. CONSTITUTION:A substrate 1 to be processed coated with exposed resist 11 is mounted on a rotary stage 2 and then brought into contact with a developer 12 to be developed for specific time, later the whole surface of the substrate 1 is irradiated with ultraviolet rays and then the development is stopped, a rinsing solution is poured on the whole surface of the substrate 1 for cleaning it up. For example, a wafer 1 coated with positive resist 11 exposed to ultraviolet rays in wavelength of 300-400nm is chucked on the rotary stage 2 and then, the developer 12 is dripped thereon to be brought to a standstill for 60 seconds in the piled up state on the resist 11. Next, the resist 11 is irradiated with the ultraviolet rays in wavelength of 150-200nm for several seconds. Finally, the rotary stage 2 is rotated to pour the rinsing solution on the resist 11 while shaking off the developer 11 for cleaning up the wafer 11. |
