发明名称 Semiconductor biased superlattice tunable interference filter/emitter
摘要 Continuously tunable, biased, semiconductor superlattice electron interference filter/emitter which can serve, for example, as a hot electron emitter in a ballistic transistor, provides energy selectivity for substantially ballistic electron wave propagation at electron energies above the superlattice potential barriers. The layers of the biased superlattice have alternatively high and low electron refractive indices wherein each layer is a quarter or half of an electron wavelength in thickness and wherein the quantum well barrier widths are adjusted in the direction of emission to provide the desired energy selectivity.
申请公布号 US4987458(A) 申请公布日期 1991.01.22
申请号 US19890374476 申请日期 1989.06.30
申请人 GEORGIA TECH RESEARCH CORPORATION 发明人 GAYLORD, THOMAS K.;BRENNAN, KEVIN F.;GLYTSIS, ELIAS N.
分类号 H01L29/12;H01L29/15;H01L29/86 主分类号 H01L29/12
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