发明名称 Chemical vapor processing method for deposition or etching on a plurality of substrates
摘要 An improved method for manufacturing uniform films or etching uniformly on a plurality of substrates is shown. The substrates are vertically placed in a reaction chamber so as to be treated at once. A chemical vapor reaction takes place by virtue of a high frequency electric power which is modulated in its amplitude. By this modulation, the deposition or etching can be carried out over the surface of a susbtrate.
申请公布号 US4987005(A) 申请公布日期 1991.01.22
申请号 US19890396795 申请日期 1989.08.21
申请人 发明人
分类号 H01L31/04;C23C16/24;C23C16/50;C23C16/509;C23C16/54;H01J37/32;H01L21/205 主分类号 H01L31/04
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