MANUFACTURE OF INSULATING-GATE FIELD-EFFECT TRANSISTOR,申请号JP19890149074-传众专利搜索

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发明名称	MANUFACTURE OF INSULATING-GATE FIELD-EFFECT TRANSISTOR
摘要
申请公布号	JPH0312967(A)	申请公布日期	1991.01.21
申请号	JP19890149074	申请日期	1989.06.12
申请人	SEIKO INSTR INC	发明人	INOUE SHIGETO
分类号	H01L29/04;H01L21/22;H01L21/336;H01L29/78	主分类号	H01L29/04
代理机构		代理人
主权项
地址

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