| 摘要 |
PURPOSE:To make a wiring electrode superior against migration, to improve the adhesion of the electrode to an insulator and to make possible a reduction in the electric resistance of the electrode by a method wherein TiN is used as the material of the electrode. CONSTITUTION:In the case of a semiconductor integrated circuit device consisting of a MOSFET provided with an Si gate, a circuit is formed on the surface of an Si substrate by a normal semiconductor manufacturing process and after an insulating film, such as an SiO2 film or the like, is formed by a CVD method or the like, a contact hole is opened by a photoetching treatment. A TiN film is formed here by a sputtering method or a CVD method or the like, a photoetching treatment is performed to form a low-resistance electrode wiring and moreover, an Al deposition film is formed on TiN electrodes of pad parts, which are used as connecting parts with outer lead wires consisting of an An or Al wire. Thereby, the low resistance electrode wiring, which is superior in migration resistance and adhesion to an insulator, can be obtained. |
