| 摘要 |
<p>PURPOSE:To make a circuit into a highly integrated circuit by using an NMOS transistor in a dynamic memory cell as a nonvolatile storage element instead of a static memory cell. CONSTITUTION:The NMOS transistor Q1 and a selective MOSFET Q1 are connected in series to the electrode on one side of the accumulative capacitance element Cs of a dynamic memory cell part. When data is rewritten, since a DRAM mode is set and a transfer mode can be set when information held with a memory cell is returned to the dynamic memory cell part of the memory cell prior to the DRAM mode, the data in the memory cell can be preserved when a power source is disconnected as keeping the same access speed as that of an ordinary DRAM between the outside. In such a way, by using the dynamic memory cell and using the NMOS transistor as the nonvolatile storage element, structure can be simplified.</p> |
