| 摘要 |
<p>PURPOSE:To prevent malfunction by equally constituting a first load circuit giving different outputs in accordance with the storage state of a memory cell, and second and third load circuits giving different outputs in accordance with the storage state of two kinds of dummy cells and comparing respective outputs. CONSTITUTION:When the storage state of the selected memory cell is the first storage state, it is equivalent to the storage state of the first dummy cell. The constitution of the first load circuit 13 is equivalent to that of the second load circuit 14 and electric characteristics are equivalent. Thus, the output from the first load circuit 13 becomes equal to the output from the second load circuit 14 connected to the first dummy cell. Consequently, a storage state detection part 25 can detect the storage state of the memory cell. Thus, malfunction owing to the fluctuation of a power voltage can be prevented.</p> |
