| 摘要 |
PURPOSE:To make it possible to conduct an etching treatment of a high aspect ratio by a method wherein an adsorptive molecular layer is formed on the surface of a wafer by dipping it into an organic solvent, and an etching-resisting uniform adsorptive molecular layer is formed in an excellent reproducible manner by projecting gas and electrons on the surface of the wafer. CONSTITUTION:A GaAs substrate 1 is etched for one minute using an SO4 etchant which is heated up to 70 deg.C, the substrate is rinsed and dried up. The substrate is dipped into trichloroethane, acetone and ethyl alcohol successively for three minutes, the substrate is washed by ultrapure water, it is dried up, and an adsorptive molecular layer is formed on the surface of the substrate. The substrate 10 is placed on the sample stand 27 of a sample introducing chamber 21, and the substrate 10 is conveyed to an etching chamber 22 through the intermediary of a gate valve 23 using a magnet feed-through 24. The substrate 10 is heated up by a heater 28, chlorine gas is jetted out on the surface of the substrate 10, etching is conducted by scanning the electron beam, emitted from an electron gun 25, on the surface of the substrate 10. |
