| 摘要 |
<p>PURPOSE:To prevent irreversible plastic deformations or destructions of X-ray penetrating thin films which take place during the etching by applying a pressure through a fluid to a face opposite to the etched face so that the above pressure and a pressure applied to the surface of an X-ray mask etched by an etching solution are offsetted. CONSTITUTION:A pressure applied to the face 6 of an X-ray mask substrate etched by an etching solution 4 is obtained by the product of the density of an etching solution, the height from an etched face to an upper liquid face, and gravitational acceleration. When pressurization liquid 5 is injected in a pressure layer 3, the product of the density of liquid 5, the height up to the upper liquid surface of liquid 5 that is filled in the pressure layer 3, and gravitational acceleration acts as a pressure pressurized by liquid 5. Then, its pressure is transmitted to a gas buffer vessel 2 through a manifold 8 and then, is applied to the face 7 of the X-ray mask opposite to the etched face 6 through a manifold 9. In this way, the etching solution, the density of pressurization liquid, the height of a water surface are regulated so that pressures applied to thin films are offsetted. Irreversible plastic deformations or destructions of X-ray penetrating thin film which take place during the etching are thus prevented.</p> |
