| 摘要 |
PURPOSE:To eliminate the cracks and pinholes of a glass layer as well as to smoothen the roughened part of the glass layer by a method wherein the surface part of the glass layer alone is fused by heating using a laser beam at the temperature above the softening point. CONSTITUTION:An insulating layer 12 is formed on an Si wafer substrate 11 a, wiring layer 14 is formed on the upper surface of the insulating layer 12, and a glass layer 13 is formed on the upper surface of the layer 14. Then, a laser beam 16 is irradiated on the wafer. The irradiated laser energy becomes weaker as it proceeds on the glass layer 13, and the upper layer part 15 only of the glass layer is instantaneously heated up above the softening point. Therefore, even when the temperature of the glass layer locally went up to a high degree, the thermal conductivity is low, and the outside of the section where the laser beam was irradiated is maintained at a low temperature. Also, no laser energy is absorbed in the wiring layer 14. As the surface layer part 15 of the glass layer 13 is softened and fused in the manner as mentioned above, the cracks 17 in the glass layer disappears from the surface layer. |
