| 摘要 |
PURPOSE:To obtain a semiconductor substrate of an arbitray thickness by a method wherein a hole having a depth corresponding to a grinding residual amount after a grinding operation of the rear is made in the semiconductor substrate in advance and the grinding operation of the substrate is stopped when the hole detects that it is opened as the grinding operation progresses. CONSTITUTION:During a diffusion process of a semiconductor device, a hole 2 having a depth corresponding to a grinding residual amount after a grinding operation of the rear is made in one part of a semiconductor substrate 1; this semiconductor substrate is set on a pedestal 7 of a grinding apparatus. A light source 3 and a photosensor 4 are installed at the upper part and the lower part at the grinding apparatus so as to sandwich the hole 2 of the substrate 1. The semiconductor substrate 1 is ground by using an edge for grinding use of a grinding plate 5. When a grinding amount reaches the bottom of the hole 2, the bottom of the hole 2 is opened. When light from the light source 3 is passed through the hole 2 of the semiconductor substrate 1 and is sensed by using the photosensor 4, a grinding operation is stopped. Thereby, it is possible to obtain the semiconductor substrate of an arbitray thickness.
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